在x射线发现一百周年之际，本文回顾了x射线发现的历史及其重要意义，简要评述了l00事年来x射线的研究和应用的光辉历程及其对现代科学技术的发展所产生的巨大影响，介绍了x射线研究的一些最新进展，展望了二十一世纪x射线研究和应用的美好前景。

脉冲激光制膜是近年来发展的富有希望的制膜新技术。本文简要介绍了脉冲激光制膜技术的原理、特点和优势以及在功能薄膜研究中的应用。

在成功地外延生长超导、铁电、铁磁等多种性质的钙钛矿结构氧化物薄膜的基础上，讨论影响氧化物薄膜外延生长的一些因素。考虑到相形成和薄膜生长动力学，在利用脉冲激光淀积法外延生长氧化物薄膜中衬底温度是十分重要的工艺参数。衬底温度对成相和生长薄膜的取向都有影响。考虑到薄膜是首先在衬底表面成核、成相并生长。因此衬底材料晶格的影响是不容忽视的。观察到衬底材料对薄膜外延生长温度的影响。在适当的工艺条件下，利用低温三步法工艺制备得到有很强织构的外延薄膜。这突出表明界面层的相互作用对钙钛矿结构薄膜的取向有着相当大的影响。

A modified sol–gel method was used to fabricate (Pb0.25Ba0.15Sr0.6)TiO3 (PBST) thin films from the precursorsolution with 0, 10 and 27V% (volume percent) 2-methoxyethanol on a Pt/Ti/SiO/Si substrate. The structural anddielectric properties of PBST thin films were investigated as a function of 2-methoxyethanol concentration in theprecursor solution. XRD and SEM analysis showed that we can get pure PBST perovskite phase and relative finedensity thin films with smooth surface only using proper concentration (10V%) of 2-methoxyethanol in the precursorsolution. Furthermore, the thin film deposited from precursor with 10V% 2-methoxyethanol has the highest dielectricconstant of 931 and the least loss factor of 0.031 and its tunability and figure of merit (FOM) are 76% and 24.1%,respectively. The results show that the structural and dielectric properties of PBST thin films are strongly dependent onthe 2-methoxyethanol in the precursor solution.

Biaxially textured MgO template films have been fabricated on a Ni-based alloy substrate (Hastelloy C276) by inclined-substrate deposition (ISD), using electron beam evaporation, at the high deposition rate of 120-300nm/min. Buffer films were subsequently deposited on these template films, and YBCO films were finally deposited by pulsed laser deposition (PLD). Crystal textures of the YBCO films were examined by X-ray pole figure/-and x-scans analysis. Good in-plane and out-of-plane textures were observed, with MgO(002)/-scan full-width-at-half-maximum (FWHM) of 10.0 and x-scan FWHM of 5.5, for a film deposited with an incline angle of 55. YBCO films were epitaxially grown on ISD MgO-buffered Hastelloy C276 substrates by PLD. Tc of 90 K with sharp transition and transport Jc of 1:4 105 A/cm2 were obtained on a 0.5-lm-thick YBCO film at 77 K in zero field.