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陈培毅, Guangli Luo*, Peiyu Zhu, Peiyi Chen, Zhinong Liu, Huiwang Lin, Peixin Qian
Vacuum 59(2000)927-931,-0001,():
-1年11月30日
An ultrahigh vacuum chemical vapor deposition system suitable for deposition of epitaxial GeSi layers has been constructed. Its reaction chamber is a rectangular quartz tube that is heated by a graphite heater. Using this system, two high-quality structures of Si/Ge0.18 Si0.82/GexSi1-x/Si nMOSFET and n-Si/p+-Ge0.2 Si0.8/n-Si HBT with controllable doping were successfully grown at 600 and 550℃.
UHV/, CVD, GeSi
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【期刊论文】Novel strained Siyrelaxed SiGe channel PMOSFETs
陈培毅, Chen Li, Guangli Luo*, Zhinong Liu, Peiyi Chen, Pei-Hsin Tsien
Thin Solid Films 409(2002)112-115,-0001,():
-1年11月30日
Due to the high hole mobility both in the surface strained Si and buried relaxed SiGe channels, we successfully fabricated a novel strained Siyrelaxed SiGe channel PMOSFET on the heterostructure strained Siyrelaxed SiGeystrained Siyrelaxed SiGe buffer layerygrading Si Ge layer, grown by home-made UHVyCVD system, which is commonly used in 1yx x the 'buried' SiGe NMOSFET.This device is easier to integrate with SiGe NMOSFET to form SiGe CMOS, than strained SiGe channel PMOSFET. Then the process is presented. With Vgs=3.5V, the maximum saturated transconductance is found to be twice as large as that of the control Si PMOS, and approximates to that of a traditional strained SiGe channel PMOS.
SiGe, MOSFET, UHVyCVD
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【期刊论文】基于磁动力学方程的电流感应磁化翻转效应的宏观模型
陈培毅, 任敏, 张磊, 胡九宁, 邓宁
物理学报2007年5月第56卷第5期/ACTA PHYSICA SINICA May., 2007, Vol. 56, No. 5,-0001,():
-1年11月30日
提出了一个基于磁动力学方程的宏观唯象理论模型,对纳米级赝自旋阀结构的电流感应磁化翻转效应给出了明晰的物理解释:流入自由层的净自旋流和自由层内的自旋弛豫过程的共同作用,导致自由层总磁矩随时间的改变,甚至产生磁化方向的翻转。模型将“铁磁/非铁磁”界面的自旋相关散射,以及铁磁层中的自旋积累和弛豫过程,统一于宏观的磁动力学方程中。通过求解该方程的解析解,给出了赝自旋阀在电流激励下的磁化翻转条件和临界电流密度的表达式。对该效应的定性解释和数值模拟结果都和实验报道良好符合。根据模型分析了影响临界电流密度的诸因素,并指出提高器件性能的途径。
电流感应磁化翻转, 磁动力学方程, 自旋电子学
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陈培毅, Ning
Thin Solid Films 513 (2006) 47-51,-0001,():
-1年11月30日
Shape
Self-assembled
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