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2009年04月06日

【期刊论文】Continuous synchronous composite process for fabricating carbon/silicon carbide composites

肖鹏, P. Xiao *, Y.D. Xu, L.T. Zhang, L.F. Cheng, Z.F. Chen

Materials Science and Engineering A313(2001)244-250,-0001,():

-1年11月30日

摘要

The continuous synchronous composite (CSC) process is a new technique, the preparation of reinforcement-phase accompanied simultaneously the deposition of SiC matrix, based on CVI principles for fabrication of ceramic matrix composites. In the CSC process, there was a gradient temperature field on the surface of the graphitic substrate, consisting of high (1000-1200℃), intermediate (900-1000℃) and low (700-900℃) temperature regions, by a bottom heating-element. Following the rotating substrate, micro-pores were well infiltrated in the intermediate temperature regions by gas diffusion transport, and macro-pores were rapidly filled with SiC in the high temperature regions by gas flow transport, respectively. In the present paper, 2-dimension carbon cloth reinforced SiC composites was fabricated by CSC process, and the microstructure, deposition rate and conversion efficiency of methyltrichlorosilane (MTS) were investigated. The densification of C/SiC composites was uniform, and the highest deposition rate within macro-pores was 25μm h−1, and the conversion efficiency of MTS varied from 11% to a maximum of 27%.

Continuous synchronous composite, Carbon/, silicon carbide, Microstructure, Deposition rate, Conversion efficiency

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2009年04月06日

【期刊论文】CSCVI法制备C布增韧SiC基复合材料及其微观结构

肖鹏, 徐永东, 黄伯云

航空材料学报,2001,21(4):33~37,-0001,():

-1年11月30日

摘要

为了提高CVI法制备C/SiC复合材料的致密化速度,提出了连续同步CVI(CSCVI)法制备C布增韧SiC基复合材料的技术路线,制备了C/SiC复合材料,并观察了其微观结构。实验结果表明,在CSCVI工艺中,SiC基体沉积速度越快,材料的致密化程度越大且致密效果越好。同时,SiC基体沉积速度只由沉积温度与MTS(CH3SiCl3)流量控制,使工艺的可操作性增强,工艺参数可在较大范围内变动。

CSCVI, CVI, C/, SiC, 微观结构, 致密度

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2009年04月06日

【期刊论文】沉积条件对CVD-sic沉积热力学与形貌的影响

肖鹏, 徐永东, 黄伯云

无机材料学报,2002,17(4):877~881,-0001,():

-1年11月30日

摘要

以CH3SiCl3为源物质,H2为载气,Ar气为稀释气体,研究了沉积温度和沉积气氛压力对SiC沉积形貌的影响。应用晶体成核一长大理论和SiC沉积热力学理论,解释了SiC沉积的各种形貌。研究表明:降低系统压力和提高沉积温度,能减小SiC在气相中形核所需的最大能量,促进形核。SiC沉积热力学随沉积条件的改变决定了SiC沉积形貌的改变。

SiC, 形貌, 沉积热力学, 沉积条件

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2009年04月06日

【期刊论文】Modeling of gas phase diffusion transport during chemical vaporinfiltration process ①

肖鹏, XIAO Peng, LI Di, XU Yong-dong, HUANGBai yun

Vol. 12 NO.3 Trans. Nonferrous Met. Soc. China Jun. 2002,-0001,():

-1年11月30日

摘要

In order to improve the uniformity of both the concentration of gaseous reagent and the deposition of matrix within micro-pores during the chemical vapor infiltration (CVI) process, a calculation modeling of gas phase diffusion transport within micro-pores was established. Taken CH3SiCl3as precursor for de positing SiC as example, the diffusion coefficient, decomposing reaction rate, concentration within the reactor, and concentration distributing profiling of MTS within micro-pore were accounted, respectively. The results indicate that, increasing the ratio of diffusion coefficient to decomposition rate constant of precursor MTS is propitious to decrease the densification gradient of parts, and decreasing the aspect ratio (L/D) of micro-pore is favorable to make the concentration uniform within pores.

Chemical vapor infiltration, modeling, diffusion transport, composites

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    中南大学,湖南

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