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【期刊论文】Study of quaternary GaInAsSballoy by scanning transmission electron microscopy
李树玮, Shuwei Li a, *, Kazuto Koike a, Folkert Schulze-Kraasch b, Erich Kubalek b
Journal of Crystal Growth 223(2001)456-460,-0001,():
-1年11月30日
Quaternary GaInAsSb epilayer was grown by MOCVD on GaSb substrate, and the crystalline state and mismatch relaxation are studied by scanning transmission electron microscopy (STEM), bright field images and convergent beam electron diffraction (CBED) patterns. Mismatch dislocations are generated from the interface, and Lomer 908 dislocations induce surface ridges, and the shift of Kikuchi lines can determine relaxation quantitatively which is similar to the value calculated from electron probe microanalysis.
A1., Characterization, A1., Crystal structure, A1., Defects, A3., Metalorganic vapor phase epitaxy, B2., Semiconducting Ш–Vmaterials, B3., Heterojunction semiconductor devices
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李树玮, K. Koike, K. Saitoh, S. Li, S. Sasa, M. Inoue, and M. Yano a)
VOLUME 76, NUMBER 11 APPLIED PHYSICS LETTERS 13 MARCH 2000,-0001,():
-1年11月30日
This letter describes the memory effect of an AlGaAs/GaAs heterojunction field-effect transistor that contains InAs nanodots in the barrier layer. The device experiences a shift of threshold gate voltage, as a function of the amount of the electrons trapped in the nanodots. These trapped electrons can be injected by applying a positive gate voltage and be erased by a visible light illumination at negative gate bias. Although the shift of the threshold gate voltage volatilizes with the time after the memory programing operation, a considerable part of the shift is retained even after 100 h at room temperature.
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【期刊论文】Ground state splitting of vertically stacked indium arsenide self-assembled quantum dots
李树玮, Shuwei Li a), Kazuto Koike
VOLUME 81, NUMBER 19 APPLIED PHYSICS LETTERS 4 NOVEMBER 2002,-0001,():
-1年11月30日
An attractive feature of vertically stacked InAs/AlGaAs quantum dots (QDs), which were buried in AlGaAs high potential barrier and spacer epilayer and grown by molecular-beam epitaxy with size-controlled growth, exhibits an unknown macroscopic quantum phenomenon (i.e., phase-change splitting of the ground state). In the vertically aligned QDs, due to many-body effect and quantum-mechanical renormalization, the electron ground state splits into a series of peaks of which the intensity gradually, systematically decreases to redshift direction with a wavelength constant. By the way, energy levels of electrons and holes might really be "seen" by deep level transient spectroscopy to which the photoluminescence experiment is in an excellent agreement.
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