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王明华, 杨建义, 江晓清, 杨方辉, Rav T. Chen
半导体学报,2002,23(7):741~745,-0001,():
-1年11月30日
给出了完整的全内反射型有机聚合物热光开关的设计方案,并研制成功了1×2光开关。所研制的X结结构全内反射光开关,在交叉态,具有约25dB的消光比;在全反射状态下,消光比达22dB,相应的驱动功率约为158mw(驱动电压3.2V,相应的驱动电流49.4mA)。
热光开关, 全内反射, x结, 有机聚合物
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【期刊论文】Structure with improved self-imaging in its graded-index multimode interference region
王明华, Rui Yin, Xiaoqing Jiang, Jianyi Yang, and Minghua Wang
Yin et al. 19, (6) 1301~1303,-0001,():
-1年11月30日
Propagation constant errors (PCEs) of guided modes in regions of multimode interference in optical networks were analyzed. Results show that a graded-index waveguide can effectively decrease the PCEs. An example based on an exponential function is presented. Numerical results show that addition of a graded-index waveguide greatly improves device performance in this structure.
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【期刊论文】Photon-Induced Total-Internal-Reflection All-Optical Switches
王明华, Xiao Qing Jiang, Jian Yi Yang, Heng Zheng Zhan, Ke Jian Chen, Yi Tang, Xi Hua Li, and Ming Hua Wang
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (2) 443~445,-0001,():
-1年11月30日
An all-optical switch is demonstrated. The switch is based on the photon-induced carrier effect and the principle of the total internal reflection (TIR). An asymmetric Y-branch with multimode waveguides is designed and fabricated on GaAlAs/GaAs epitaxial materials. The 805-nm light is used to activate the carrier effects and generate the total-reflection effect at the branch. The device is characterized at the wavelength of 1.31m. Its extinction ratio is larger than 18.0dB when the injected optical density is 15
All-optical switch, integrated optics, photon-induced, total internal reflection.,
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王明华, 江晓清, 李柏阳, 杨建义
半导体学报,2002,23(6):633~636,-0001,():
-1年11月30日
给出一种基于SOI材料结构紧凑的新颖AWG器件,它是将一个全内反射波导镜插入原波导阵列中间,并且利用全仙反射时产生的相位差进行TE、TM模偏振补偿的方法,该器件具有尺寸小、制作工艺简单等特点。同时,给出一些实验结果,实验结果证实这种结构的AWG器件是可行的。
列阵波导光栅(, AWG), , 密集波分复用(, DWDM), , 波导镜, 偏振补偿
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【期刊论文】离散谱折射率法优化设计深刻蚀、单模GaAs/GaAIAs脊形光波导*
王明华, 马慧莲, 杨建义, 江晓清
半导体学报,2001,22(4):481~485,-0001,():
-1年11月30日
采用离散谱折射率法对深刻蚀GaAs/GaAIAs多层脊形光波导的特性作了详细的理论分析,并对所获得的较大截面、低损耗的单模脊形光波导的制作容差性作了进一步的分析。计算表明,用离散亦折射率法获得的单模脊形光波导具有较大的制作容差性。
离散谱折和射率法, 深刻蚀, GaAs/, GaAIAs
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