Aluminum nitride nanostructures are attractive for many promising applications in semiconductor nanotechnology. Herein we report on vapor-solid growth of quasi-aligned aluminum nitride nanocones on catalyst-coated wafers via the reactions between AlCl3 vapor and NH3 gas under moderate temperatures around 700℃, and the growth mechanism is briefly discussed. The as-prepared wurtzite aluminum nitride nanocones grow preferentially along the c-axis with adjustable dimensions of the sharp tips in the range of 20-60nm. The photoluminescence spectrum reveals a broad blue emission band with a fine photon structure while the field emission study shows a notable emission current with a moderate turn-on field as expected, suggesting their potential applications in light and electron emission nanodevices.

A possible smallest single-walled BN nanotube with the diameter of 0.4nm is proposed. The studied nanotube is of armchair (3,3) and thought to be associated with the BN fullerene, B12N12. We have applied the ab initio MP2/6-31G//HF/6-31G method to investigate the growth mechanisms of this nanotube from B12N12. Our results show that a B12N12 fullerene may react with B2H6 and NH3 to form an armchair (3,3) tubular structure under certain experimental conditions such as high temperature. The armchair (3,3) tube can continuously incorporate B and N atoms to grow and can also disassociate H2 to close into a half-B12N12 cap. The growth of the tube is predicted to be favorable to the capping of the tube in an atmosphere with B2H6 and NH3 in it. And the cap of the tube is relatively easier to be opened by H2 or B2H6 and NH3 to convert to a growing open-ended tube.

A chemical method has been developed for synthesizing boron nitride nanowires through the reaction of a mixture gas of nitrogen (N2) and ammonia (NH3) over nanoscale a-FeB particles at 1100℃. Boron content in the product comes from the a-FeB catalyst itself. Transmission electron microscopic image indicates an abundant quantity of BN nanowires with diameter about 20nm and length up to several tens of microns. The product has also been characterized by high-resolution electron microscopy and electron energy loss spectrometer. The perfectly straight lattice fringes with an interlayer spacing of about 0.333nm corresponding to d0002 spacing of h-BN indicate that the BN nanowires are well crystallized. Also, a growth mechanism has been speculated.

Gallium phosphide nanotubes with zinc blende structure were synthesized for the first time. The as-prepared GaP nanotubes are polycrystalline with diameters of 30-120nm and occasionally partially filled. The growth has been reasonably proposed to follow vapor-liquid-solid (VLS) mechanism. The integration of the nanotubular structure with the unique intrinsic semiconducting properties of GaP might bring GaP nanotubes some novel optical and electronic properties and applications.

Aluminum nitride nanobelts with hexagonal structure were successfully synthesized by evaporating aluminum powder in ammonia/nitrogen atmosphere at 1200℃. The as-prepared AlN nanobelts have a rectangular cross section with a width of 30-500nm and length of about 100m. The optical characterization indicates that the vibration modes of the AlN nanobelt agree well with those of AlN film despite its nanobelt geometry. This nanobelt geometry of AlN could be important for the construction of GaN-based nanoheterostructures in future nanoelectronics.