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马瑾, Jin Ma, Dehang Zhang, Junqing Zhao, Chuenyu Tan, Tianlin Yang, Honglei Ma
Applied Surface Science 151 (1999) 239-243,-0001,():
-1年11月30日
Sn-doped indium oxide(ITO).films have been prepared on polyimide(PI).thin film substrate at low substrate temperature (80–240℃).by reactive evaporation. The samples were deposited as polycrystalline films with a cubic bixbyite structure and a preferred orientation with the(111).plan parallel to the substrate. The structural, optical and electrical properties of the obtained films depending on deposition temperature have been investigated. High quality films with resistivity as low as 7×10-4 V cm and transmittance over 80% have been obtained by suitably controlling the deposition parameters.
ITO films, Organic substrate, Reactive evaporation
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【期刊论文】Photoresponse of polycrystalline ZnO films deposited by r.f. bias sputtering
马瑾, D.H.Zhang, D.E.Brodie
Thin Solid Films 261 (1995) 334-339,-0001,():
-1年11月30日
The photoresponse of polycrystalline ZnO films generally contains both a true photoconductivity and a contribution from surface structural changes which can alter the surface conducatance via the chemisorption and photodesorption of an active ambient-gas component. The surface structural changes can increase the conductance by up to seven orders of magnitude for a 500nm thick sample when illuminated with an intensity of 4
Photoconductivity, Photodesorption, Sputtering, Zinc oxide
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马瑾, Ma Jin, Ji Feng, Zhang De-heng, Ma Hong-lei, Li Shu-ying
Thin Solid Films 357 (1999) 98-101,-0001,():
-1年11月30日
Undoped and Aluminium-doped Zinc oxide films have been prepared by thermal evaporation of zinc acetate (Zn(CH3COO)2
Zinc oxide, Optical properties, Electrical properties, Structural properties
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【期刊论文】Electrical and optical properties of ZnO:Al films prepared by an evaporation method
马瑾, Jin Ma, Feng Ji, Hong-lei Ma, Shu-ying Li
Thin Solid Films 279 (1996) 213-215,-0001,():
-1年11月30日
This paper describes the preparation of aluminium-doped zinc oxide films by thermal evaporation of zinc acetate(Zn(CH3COO)2
Conductivity, X-ray diffraction, Zinc oxide
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【期刊论文】Burstein shift usd UV photoresponse in IBAD-deposited transparent conducting ZnO films
马瑾, D.H.Zhang, R.W.Gao, H.L.Ma
Thin Solid Films 295 (1997) 83-86,-0001,():
-1年11月30日
A Burstein-Moss shift has been observed in highly transparent conducting zinc oxide films prepared by ion-bean-assisted reactive deposition. The optical gaps ranged from 3.27 to 4.1 eV increase with an increase in film conductivities and carrier concentrations. Annealing over 773K reduces conductivities by several orders of magnitude and subsequently narrows the optical gaps from 3.41 to 3.24 eV. When the films are irradiated with a UV light, they exhibit some photoresponse. The observed UV photoresponse can bi interpreted using oxygen photodesorption and chemisorption at the surface
Zinc oxide, Band structure, Optical properties, Photoresponse
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