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马瑾, H.L.Ma, D.H.Zhang, P.Ma, S.Z.Win, S.Y.Li
Thin Solid Films 263 (1995) 105-110,-0001,():
-1年11月30日
Highly transparent conducting indium tin oxide(ITO)films have been prepared on glass substrates by reactively evaporating In-Sn alloy in a system with an oxygen partial pressure of (1-2)×10-4 Torr and a substrate temperature between 100 and 320℃. Mechanically stable polycrystalline conducting ITO films having a preferred orientation with the (111) planes parallel to the substrates were deposited with resistivities in the range from 1.12×10-4 to 3.07×10-4 cm, with carrier densities between 7×1020 and 1.27×1021 cm-3 and Hall mobilities between 27 and 40 cm2 V-1 S-1. The average transmittance reached 95% for a film 175 nm thick in the wavelength range of the visible spectrum. The resistivities and transmittances of the obtained films depended on the oxygen partial pressures and substrate temperatures during film fabrication.
Conductivity, Indium oxide, Optical properties, Tin
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马瑾, Jin Ma, Dehang Zhang, Junqing Zhao, Chuenyu Tan, Tianlin Yang, Honglei Ma
Applied Surface Science 151 (1999) 239-243,-0001,():
-1年11月30日
Sn-doped indium oxide(ITO).films have been prepared on polyimide(PI).thin film substrate at low substrate temperature (80–240℃).by reactive evaporation. The samples were deposited as polycrystalline films with a cubic bixbyite structure and a preferred orientation with the(111).plan parallel to the substrate. The structural, optical and electrical properties of the obtained films depending on deposition temperature have been investigated. High quality films with resistivity as low as 7×10-4 V cm and transmittance over 80% have been obtained by suitably controlling the deposition parameters.
ITO films, Organic substrate, Reactive evaporation
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马瑾, Jin Ma, Shu-Ying Li, Jun-qing Zhao, Hong-Lei Ma
Thin Solid Films 307 (1997) 200-202,-0001,():
-1年11月30日
Highly transparent conducting indium tin oxide(ITO) films have been prepared on polyester thin film substrate by reactively evaporating metal In-Sn alloy in a system with an oxygen partial pressure of (3-30)×10-5 Torr and substrate temperatures between 80 and 240℃. The structure and opto-electrical properties of the films depending on the deposition conditions have been investigated. High quality films with a average transparency of 83% and the resistivity of 7×10-4 v cm have been obtained by controlling the deposition prameters.
Indium tin oxide, Polyester substrate, Reactive evaporation
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【期刊论文】Burstein shift usd UV photoresponse in IBAD-deposited transparent conducting ZnO films
马瑾, D.H.Zhang, R.W.Gao, H.L.Ma
Thin Solid Films 295 (1997) 83-86,-0001,():
-1年11月30日
A Burstein-Moss shift has been observed in highly transparent conducting zinc oxide films prepared by ion-bean-assisted reactive deposition. The optical gaps ranged from 3.27 to 4.1 eV increase with an increase in film conductivities and carrier concentrations. Annealing over 773K reduces conductivities by several orders of magnitude and subsequently narrows the optical gaps from 3.41 to 3.24 eV. When the films are irradiated with a UV light, they exhibit some photoresponse. The observed UV photoresponse can bi interpreted using oxygen photodesorption and chemisorption at the surface
Zinc oxide, Band structure, Optical properties, Photoresponse
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马瑾, T.L. Yang, D.H. Zhang, J. Ma, H.L. Ma, Y. Chen
Thin Solid Films 326 (1998) 60-62,-0001,():
-1年11月30日
Transparent conducting ZnO:Al films with good adhesion and low resistivity have been prepared on organic substrates by r.f. magnetronsputtering. Polycrystalline ZnO:Al films having a preferred orientation were obtained with resistivity 1.84
ZnO:Al films, Organic substrates, Magnetron sputtering
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