中国科技论文在线

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2007年11月22日

【期刊论文】The effect on polycrystalline ZnO film surfaces due to an Ar plasma introduced by a vacuum gauge

马瑾， D.H.Zhang， D.E.Brodie

Thin Solid Films 257 (1995) 58-62，-0001，（）：

-1年11月30日

A strong accumulation layer can be produced on the surface of polycrystalline ZnO films when the samples are exposed to ions from an ineret gas discharge in Ar or Kr. A combination of surface conductance and surface potential measurements show that an accumulation layer is induced by the adsorption of charges from the inert gas plasma which neutralizes and removes chemisorbed oxygen atoms, and this can increase the conductance by more than 6 orders of magnitude, for 500 nm thick films. Electrical neutrality in the ZnO provides the electrons for the accumulation layer, either from the ohmic contacts or the plasma. This accumulation layer can be further enhanced by illumination with UV light.

Adsorption， Conductivity， Photovoltage， Zinc oxide

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2007年11月22日

【期刊论文】Electrical and optical properties of ZnO:Al films prepared by an evaporation method

马瑾， Jin Ma， Feng Ji， Hong-lei Ma， Shu-ying Li

Thin Solid Films 279 (1996) 213-215，-0001，（）：

-1年11月30日

摘要

This paper describes the preparation of aluminium-doped zinc oxide films by thermal evaporation of zinc acetate(Zn(CH3COO)2

Conductivity， X-ray diffraction， Zinc oxide

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2007年11月22日

【期刊论文】Preparation and properties of indium tin oxide films deposited on polyester substraters by reactive evaporation

马瑾， Jin Ma， Shu-Ying Li， Jun-qing Zhao， Hong-Lei Ma

Thin Solid Films 307 (1997) 200-202，-0001，（）：

-1年11月30日

摘要

Highly transparent conducting indium tin oxide(ITO) films have been prepared on polyester thin film substrate by reactively evaporating metal In-Sn alloy in a system with an oxygen partial pressure of (3-30)×10-5 Torr and substrate temperatures between 80 and 240℃. The structure and opto-electrical properties of the films depending on the deposition conditions have been investigated. High quality films with a average transparency of 83% and the resistivity of 7×10-4 v cm have been obtained by controlling the deposition prameters.

Indium tin oxide， Polyester substrate， Reactive evaporation

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2007年11月22日

【期刊论文】Optical and electronic properties of transparent conducting ZnO and ZnO:Al films prepared by evaporating method

马瑾， Ma Jin， Ji Feng， Zhang De-heng， Ma Hong-lei， Li Shu-ying

Thin Solid Films 357 (1999) 98-101，-0001，（）：

-1年11月30日

摘要

Undoped and Aluminium-doped Zinc oxide films have been prepared by thermal evaporation of zinc acetate (Zn(CH3COO)2

Zinc oxide， Optical properties， Electrical properties， Structural properties

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2007年11月22日

【期刊论文】Preparation and characterization of ITO films deposited on polyimide by reactive evaporation at low temperature

马瑾， Jin Ma， Dehang Zhang， Junqing Zhao， Chuenyu Tan， Tianlin Yang， Honglei Ma

Applied Surface Science 151 (1999) 239-243，-0001，（）：

-1年11月30日

摘要

Sn-doped indium oxide(ITO).films have been prepared on polyimide(PI).thin film substrate at low substrate temperature (80–240℃).by reactive evaporation. The samples were deposited as polycrystalline films with a cubic bixbyite structure and a preferred orientation with the(111).plan parallel to the substrate. The structural, optical and electrical properties of the obtained films depending on deposition temperature have been investigated. High quality films with resistivity as low as 7×10-4 V cm and transmittance over 80% have been obtained by suitably controlling the deposition parameters.

ITO films， Organic substrate， Reactive evaporation

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