用脉冲激光镀膜法，在不同的温度和氧压条件下，在Si（100）片上制备了一系列的CeO2膜。X射线衍射分析表明,在较低的氧压下生长的CeO2膜为（111）取向，在较高的氧压下生长的膜则为（100）取向。研究表明，CeO2膜的取向对氧压显示了独特的依赖性。氧压对控制膜的结晶取向具有十分重要的作用。讨论了氧压对CeO2薄膜结晶取向影响的可能机理。

利用脉冲激光法在LaAl03衬底上外延生长了La-Ca-Mn-O、La-S-Mn-0等巨磁电阻薄膜。测定了这些薄膜的电阻一温度特性，观测到了其铁磁转变及巨磁电阻效应实验发现，较高的淀积温度使薄膜的峰值转变温度71D降低、峰值电阻率增大，而高温后退火则具有相反的效果。分析比较了多种因素对薄膜生长与性能的影响及其机理。

采用脉冲激光沉积（PLD）技术，利用Lsc0/ce02/YsZ多异质缓冲层，在si(100)基片上成功地制备了c轴一致取向的Bi3.15Nd0.85Ti3O12（BNT）铁电薄膜利用x射线衍射（xRD）和扫描电镜（sEM）分析测定了薄膜的相结构、取向和形貌特征，考察了沉积温度和氧分压对BNT薄膜微结构、取向和形貌的影响，确定了BNr薄膜的最佳沉积条件对在优化的条件下制备得到的BNT薄膜的CV曲线测试得到了典型的蝴蝶形曲线，表明该薄膜具有较好的电极化反转存储特性最后讨论了BNT薄膜铁电性能与薄膜取向的相关性

Epitaxial growth of the La0 3Sr0 5CoO3(LSCO) thin films has been realized on LaA103, SrTiO3 and MgOsubstrates by pulsed laser deposition. The epitaxial growth behavior and the electrical transport properties of these filmswere studied systematically. The temperature dependencies of the resistivity of the film have been determined. Studiesindicate that close dependencies exist between the crystal structures and the electrical transport properties of the epitaxialLSCO films, and that the epitaxial thin films are of low resistivity and metallic conductive features. The epitaxial filmsdeposited on the LaAl03 substrates at about 700℃ possess the optimal properties compared with the others. Discussionsof the dependencies and the mechanisms of the epitaxial structures on the electrical transport properties of the LSCO filmshave been made

High-quality YBa2Cu3O7−x (YBCO) films were fabricated onyttria-stabilized zirconia (YSZ)-buffered Hastelloy C276 substrates bypulsed laser deposition. YSZ was grown by ion-beam-assisted deposition.A thin (≈10 nm) CeO2 layer was deposited before the deposition of YBCO.The crystalline structure and biaxial texture of the YBCO film and the bufferlayer were examined by x-ray diffraction 2θ-scan, φ-scan and pole-figureanalysis. Epitaxial growth of the YBCO film on the buffer layer wasobserved. Full width at half maximum (FWHM) value of 7.4◦ was measuredfrom the φ-scan of YBCO(103). Raman spectroscopy showedcompositional uniformity and phase integrity in the YBCO films. Surfacemorphologies of the YBCO films were examined by scanning electronmicroscopy. Comparative studies indicated that the CeO2 buffer layersignificantly improves the structural alignment and superconductingproperties of YBCO films. Tc=90K, with sharp transition, and transportJc=2.2×106 A cm−2 at 77K in zero-external field were obtained on the 0.5μm thick YBCO films. The dependence of Jc on the FWHM of theYBCO(103) φ-scan indicated that high Jc is associated with low FWHM.