脉冲高能量密度等离子体是一项全新的等离子体材料表面处理和薄膜制备技术。文章主要介绍了作者近几年来在这方面的研究成果。从理论和试验上研究了脉冲高能量密度等离子体的产生机制及其物理性质。研究了脉冲等离子体与材料相互作用的基本物理现象和物理机制。诊断测量表明，脉冲等离子体具有电子温度高（10-100eV）、等离子体密度高（1014-1016cm-3）、定向速度高（～107cmPs）、功率大（104WPcm2）等特点。在制备薄膜时具有沉积速率高，薄膜与基底粘结力强，并兼有激光表面处理、电子束处理、冲击波轰击、离子注入、溅射、化学气相沉积等综合性特点，可以在室温下合成亚稳态相和其他化合物材料。在此基础上，系统地进行了脉冲等离子体薄膜制备和材料表面改性及其机理的研究。在室温下的不同材料衬底上成功地沉积了性能良好的较大颗粒立方氮化硼、碳氮化钛、氮化钛、类金刚石、氮化铝等薄膜材料。沉积薄膜和基底之间存在一个很宽的过渡层，因此导致薄膜与基底有很强的粘结力。经脉冲等离子体处理过的金属材料表面性能得到了极大改善。

High-quality titanium nitride (TiN) films with nano-structure were prepared at ambient temperature on (111) silicon substrates by filtered cathodic arc plasma (FCAP) technology with an in-plane "S" filter. The effects of substrate bias and argon flux on the crystal grain size, roughness and preferred orientation were systematically investigated. It was found that the substrate bias and argon flux can affect the properties of TiN films effectively. Transmission electron microscope images showed that the crystal grain size was uniform and ranged from 10nm to 5nm. The results of X-ray diffraction and electron diffraction indicated that the degree of preferred orientation was more evident under high substrate bias and high argon flux.

Single crystals of ZnB2O4 have been grown from a supercooled molten ZnO-B2O3 system on multiwall carbon nanotubes. Transmission electron microscopy investigations indicated that the originally curly carbon nanotubes were well straightened after the single-crystal coating. The coating and straightening mechanism are discussed.

采用柱状靶多弧直流磁控溅射法，100℃基底温度下在玻璃衬底上制备了纳米氮化铜（Cu3N）薄膜。用X射线衍射研究了不同氮气分压对Cu3N薄膜晶体结构及晶粒尺寸的影响。结果显示薄膜由Cu3N和Cu的纳米微晶复合而成，其中Cu3N纳米微晶具有立方反ReO3结构。通过原子力显微镜对薄膜表征显示，膜表面比较光滑，具有较低的粗糙度。X射线光电子能谱对薄膜表面的成分分析表明，Cu3N薄膜表面铜元素同时以+1价和+2价存在。Cu3N的Cu2p3P2，Cu2p1P2及N1s峰分别位于93217，95217和39919eV，Cu2p原子自旋2轨道耦合裂分能量间距为20eV。用台阶仪和四探针方法测量了薄膜的厚度及电阻率，薄膜的沉积速率和电阻率在很大程度上受到氮气分压的调制。

The response of an RF sputtered NiOx thin film to step potential and its electrochromic mechanism have been investigated. It was found that the NiOx films manifested fine electrochromic properties. Bleaching and coloration did not cause the change of the film's structure. The NiOx films are non-stoichoimetric with Ni vacancies. It is suggested that the bleaching and coloration reaction of the NiOx films in a KOH solution occurs along the grain boundaries. The physical absorption of colored NiOx films is caused by the intraband absorbance of the t2g level of the Ni3+ ion.