分别利用磁过滤阴极弧等离子体沉积装置和直流磁控溅射装置在不锈钢基底上制备了TiN涂层，采用X射线光电子能谱仪、X射线衍射仪和扫描电子显微镜对涂层的结构及形貌进行了表征；利用纳米压痕仪测定了涂层的硬度；在DF2PM型动摩擦系数精密测定仪上考察了涂层的摩擦学性能。结果表明：与采用直流磁控溅射法在400℃基底上制备的TiN涂层相比，采用磁过滤沉积装置在室温下制备的TiN涂层更加致密，表面平滑，最大硬度达35Gpa，摩擦系数明显较小（0.1～0.4），耐磨性较好。

The high-temperature behavior of boronized layer of 45# carbon steel has been studied in detail by using high-temperature X-ray diffractometer (HTXRD), difference temperature analysis (DTA) technique, high-temperature microscope, high-temperature hardness tester. Research results show that (1) the hardness of the boride layer decrease with temperature, (2) there is no oxidation of boride layer on the measuring range of the temperature, and (3) the threshold temperature of the phase transformation of the boride layer from FeB to Fe2B is about 860℃.

Copper nitride (Cu3N) thin films were prepared on glass substrates by reactive radio-frequency (RF) magnetron sputtering under different nitrogen flow rate. The thermal stability of the Cu3N films was investigated through vacuum annealing treatment at different temperature. X-ray diffraction, scanning electron microscopy and near-normal reflectance spectra were employed to characterize the films. The deposited Cu3N films take on a different preferred orientation, which changed from (111) to (100) with increase of N2 ratio. The grains size of thin films can become small when the N2 ratio increases. The Cu3N phase can completely decompose into Cu and N2 through vacuum annealing treatment at a temperature of 200 1C. The reflectance of as-deposited Cu3N films is quite different from decomposed films.

利用自行研制的磁过滤等离子体设备，在室温条件下的不锈钢基底上成功地制备了性能良好的纳米结构TiN薄膜。运用原子力显微镜和X射线衍射仪对其结构和形貌进行了表征。利用纳米硬度仪测量了TiN薄膜的硬度和弹性模量。结果显示：沉积的TiN薄膜表面非常平整光滑，致密而无缺陷；硬度远高于粗晶TiN的硬度；TiN晶粒尺寸在30～50nm；沉积过程中在基底上施加的负偏压会影响纳米结构TiN薄膜的结构和性能。

Silicon-carbon nitride (SiCN) thin films were deposited on Si substrate at room temperature by r.f. reactive sputtering. Fourier transform infrared spectroscopy (FTIR), optical absorption spectra (α(λ)) and electrical conductivity (б) were studied for the thin films. The effect of the annealing on IR and a was investigated at different temperatures. IR analysis indicates that Si-H, C-N, Si-C, Si-N, C-N and C=N bonds are present in a-SiCN:H films. A shift of the stretching mode for Si-H bond to the high-wavenumber side is observed with increasing the nitrogen flow ratio уN2 (=Nz/(Ar+H2+N2+CH4)). The shift is from 2000 to 2190cm-1 when уN2=13.7%. The study shows that the film structure and optical and electrical properties are obviously modified readily by controlling the process parameters of deposition. The improvement in the film properties, e.g., good thermal stability, is explained mainly in terms of the cross-linked structure between the Si, C and N atoms.