This article firstly presents results for C45 steel surface modification by post boronizing N

Silicon-carbon nitride (SiCN) thin films were deposited on Si substrate at room temperature by r.f. reactive sputtering. Fourier transform infrared spectroscopy (FTIR), optical absorption spectra (α(λ)) and electrical conductivity (б) were studied for the thin films. The effect of the annealing on IR and a was investigated at different temperatures. IR analysis indicates that Si-H, C-N, Si-C, Si-N, C-N and C=N bonds are present in a-SiCN:H films. A shift of the stretching mode for Si-H bond to the high-wavenumber side is observed with increasing the nitrogen flow ratio уN2 (=Nz/(Ar+H2+N2+CH4)). The shift is from 2000 to 2190cm-1 when уN2=13.7%. The study shows that the film structure and optical and electrical properties are obviously modified readily by controlling the process parameters of deposition. The improvement in the film properties, e.g., good thermal stability, is explained mainly in terms of the cross-linked structure between the Si, C and N atoms.

The high-temperature behavior of boronized layer of 45# carbon steel has been studied in detail by using high-temperature X-ray diffractometer (HTXRD), difference temperature analysis (DTA) technique, high-temperature microscope, high-temperature hardness tester. Research results show that (1) the hardness of the boride layer decrease with temperature, (2) there is no oxidation of boride layer on the measuring range of the temperature, and (3) the threshold temperature of the phase transformation of the boride layer from FeB to Fe2B is about 860℃.

The response of an RF sputtered NiOx thin film to step potential and its electrochromic mechanism have been investigated. It was found that the NiOx films manifested fine electrochromic properties. Bleaching and coloration did not cause the change of the film's structure. The NiOx films are non-stoichoimetric with Ni vacancies. It is suggested that the bleaching and coloration reaction of the NiOx films in a KOH solution occurs along the grain boundaries. The physical absorption of colored NiOx films is caused by the intraband absorbance of the t2g level of the Ni3+ ion.

脉冲高能量密度等离子体是一项全新的等离子体材料表面处理和薄膜制备技术。文章主要介绍了作者近几年来在这方面的研究成果。从理论和试验上研究了脉冲高能量密度等离子体的产生机制及其物理性质。研究了脉冲等离子体与材料相互作用的基本物理现象和物理机制。诊断测量表明，脉冲等离子体具有电子温度高（10-100eV）、等离子体密度高（1014-1016cm-3）、定向速度高（～107cmPs）、功率大（104WPcm2）等特点。在制备薄膜时具有沉积速率高，薄膜与基底粘结力强，并兼有激光表面处理、电子束处理、冲击波轰击、离子注入、溅射、化学气相沉积等综合性特点，可以在室温下合成亚稳态相和其他化合物材料。在此基础上，系统地进行了脉冲等离子体薄膜制备和材料表面改性及其机理的研究。在室温下的不同材料衬底上成功地沉积了性能良好的较大颗粒立方氮化硼、碳氮化钛、氮化钛、类金刚石、氮化铝等薄膜材料。沉积薄膜和基底之间存在一个很宽的过渡层，因此导致薄膜与基底有很强的粘结力。经脉冲等离子体处理过的金属材料表面性能得到了极大改善。