Copper nitride (Cu3N) thin films were prepared on glass substrates by reactive radio-frequency (RF) magnetron sputtering under different nitrogen flow rate. The thermal stability of the Cu3N films was investigated through vacuum annealing treatment at different temperature. X-ray diffraction, scanning electron microscopy and near-normal reflectance spectra were employed to characterize the films. The deposited Cu3N films take on a different preferred orientation, which changed from (111) to (100) with increase of N2 ratio. The grains size of thin films can become small when the N2 ratio increases. The Cu3N phase can completely decompose into Cu and N2 through vacuum annealing treatment at a temperature of 200 1C. The reflectance of as-deposited Cu3N films is quite different from decomposed films.

利用自行研制的磁过滤等离子体设备，在室温条件下的不锈钢基底上成功地制备了性能良好的纳米结构TiN薄膜。运用原子力显微镜和X射线衍射仪对其结构和形貌进行了表征。利用纳米硬度仪测量了TiN薄膜的硬度和弹性模量。结果显示：沉积的TiN薄膜表面非常平整光滑，致密而无缺陷；硬度远高于粗晶TiN的硬度；TiN晶粒尺寸在30～50nm；沉积过程中在基底上施加的负偏压会影响纳米结构TiN薄膜的结构和性能。

采用柱状靶多弧直流磁控溅射法，100℃基底温度下在玻璃衬底上制备了纳米氮化铜（Cu3N）薄膜。用X射线衍射研究了不同氮气分压对Cu3N薄膜晶体结构及晶粒尺寸的影响。结果显示薄膜由Cu3N和Cu的纳米微晶复合而成，其中Cu3N纳米微晶具有立方反ReO3结构。通过原子力显微镜对薄膜表征显示，膜表面比较光滑，具有较低的粗糙度。X射线光电子能谱对薄膜表面的成分分析表明，Cu3N薄膜表面铜元素同时以+1价和+2价存在。Cu3N的Cu2p3P2，Cu2p1P2及N1s峰分别位于93217，95217和39919eV，Cu2p原子自旋2轨道耦合裂分能量间距为20eV。用台阶仪和四探针方法测量了薄膜的厚度及电阻率，薄膜的沉积速率和电阻率在很大程度上受到氮气分压的调制。

High-quality titanium nitride (TiN) films with nano-structure were prepared at ambient temperature on (111) silicon substrates by filtered cathodic arc plasma (FCAP) technology with an in-plane "S" filter. The effects of substrate bias and argon flux on the crystal grain size, roughness and preferred orientation were systematically investigated. It was found that the substrate bias and argon flux can affect the properties of TiN films effectively. Transmission electron microscope images showed that the crystal grain size was uniform and ranged from 10nm to 5nm. The results of X-ray diffraction and electron diffraction indicated that the degree of preferred orientation was more evident under high substrate bias and high argon flux.

Lanthanum-modified lead zirconate titanate (PLZT) thin films, with the La/Zr/Ti ratio being 9/63/37, were deposited on indium tin oxide (ITO)-coated glass substrate by R.F. magnetron sputtering method. Effects of heat-treatment conditions on the structure and chemical homogeneity of the PLZT thin films were investigated by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The PLZT thin films with desired perovskite structure were obtained after covered with lead oxide and then annealed at 625℃ for 150 min. The binding energy of Pb4f7/2, Ti2p3/2, Zr3d5/2, La3d5/2, and O1s in PLZT thin films were: 138.3, 455.7, 181.2, 835.9, and 529.4 eV, respectively. The excess lead oxide in the PLZT thin films promoted the perovskite structure formation, and baffled the movement of TiO2 and ZrO2 as well. A small quatity of TiO2 and ZrO2 coexisted with PLZT in the surface of samples. And the lack of oxygen inside the films resulted in the valence decrease of a little part of Ti's from +4 to +2.