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【期刊论文】SiCN thin film prepared at room temperature by r.f. reactive sputtering
闫鹏勋, X.C. Wu a, R.Q. Cai a, P.X. Yan a, *, W.M. Liu b, J. Tian b
Applied Surface Science 185(2002)262-266,-0001,():
-1年11月30日
Silicon-carbon nitride (SiCN) thin films were deposited on Si substrate at room temperature by r.f. reactive sputtering. Fourier transform infrared spectroscopy (FTIR), optical absorption spectra (α(λ)) and electrical conductivity (б) were studied for the thin films. The effect of the annealing on IR and a was investigated at different temperatures. IR analysis indicates that Si-H, C-N, Si-C, Si-N, C-N and C=N bonds are present in a-SiCN:H films. A shift of the stretching mode for Si-H bond to the high-wavenumber side is observed with increasing the nitrogen flow ratio уN2 (=Nz/(Ar+H2+N2+CH4)). The shift is from 2000 to 2190cm-1 when уN2=13.7%. The study shows that the film structure and optical and electrical properties are obviously modified readily by controlling the process parameters of deposition. The improvement in the film properties, e.g., good thermal stability, is explained mainly in terms of the cross-linked structure between the Si, C and N atoms.
SiCN thin film, Room temperature, r., f., reactive sputtering
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【期刊论文】Post boronizing ion implantation of C45 steel
闫鹏勋, P.X. Yan a, *, Z.Q. Wei a, X.L. Wen a, Z.G. Wu a, J.W. Xu a, W.M. Liu b, J. Tian b
Applied Surface Science 195(2002)74-79,-0001,():
-1年11月30日
This article firstly presents results for C45 steel surface modification by post boronizing N
Boride, Gaseous boronizing, Ion implantation
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闫鹏勋, P. X. Yan, a) J. Z. Liu, J. Wang, and Z. G. Wu
Appl. Phys. Lett., Vol. 85, No.20, 15 November 2004,-0001,():
-1年11月30日
Single crystals of ZnB2O4 have been grown from a supercooled molten ZnO-B2O3 system on multiwall carbon nanotubes. Transmission electron microscopy investigations indicated that the originally curly carbon nanotubes were well straightened after the single-crystal coating. The coating and straightening mechanism are discussed.
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闫鹏勋, P.X. Yan *, X.M. Zhang, J.W. Xu, Z.G. Wu, Q.M. Song
Materials Chemistry and Physics 71(2001)107–110,-0001,():
-1年11月30日
The high-temperature behavior of boronized layer of 45# carbon steel has been studied in detail by using high-temperature X-ray diffractometer (HTXRD), difference temperature analysis (DTA) technique, high-temperature microscope, high-temperature hardness tester. Research results show that (1) the hardness of the boride layer decrease with temperature, (2) there is no oxidation of boride layer on the measuring range of the temperature, and (3) the threshold temperature of the phase transformation of the boride layer from FeB to Fe2B is about 860℃.
Boronizing, High-temperature X-ray diffractometer, Difference temperature analysis, Hardness
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闫鹏勋, Y. J. Zhang , , P. X. Yan *, Z. G. Wu , W. W. Zhang , G. A. Zhang , W. M. Liu, and Q. J. Xue
,-0001,():
-1年11月30日
High-quality titanium nitride (TiN) films with nano-structure were prepared at ambient temperature on (111) silicon substrates by filtered cathodic arc plasma (FCAP) technology with an in-plane "S" filter. The effects of substrate bias and argon flux on the crystal grain size, roughness and preferred orientation were systematically investigated. It was found that the substrate bias and argon flux can affect the properties of TiN films effectively. Transmission electron microscope images showed that the crystal grain size was uniform and ranged from 10nm to 5nm. The results of X-ray diffraction and electron diffraction indicated that the degree of preferred orientation was more evident under high substrate bias and high argon flux.
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