Copper nitride (Cu3N) thin films were prepared on glass substrates by reactive radio-frequency (RF) magnetron sputtering under different nitrogen flow rate. The thermal stability of the Cu3N films was investigated through vacuum annealing treatment at different temperature. X-ray diffraction, scanning electron microscopy and near-normal reflectance spectra were employed to characterize the films. The deposited Cu3N films take on a different preferred orientation, which changed from (111) to (100) with increase of N2 ratio. The grains size of thin films can become small when the N2 ratio increases. The Cu3N phase can completely decompose into Cu and N2 through vacuum annealing treatment at a temperature of 200 1C. The reflectance of as-deposited Cu3N films is quite different from decomposed films.

分别采用多弧离子镀（MAIP）和带有平面“S”形过滤管的磁过滤阴极弧设备（FCAP）在不锈钢基底上制备了2种TiN薄膜；采用往复式球2盘摩擦磨损试验机评价了2种薄膜的摩擦学性能；采用扫描电子显微镜观察和分析了薄膜磨斑表面形貌及其元素面分布。结果表明：采用FCAP技术制备的薄膜表面光滑、缺陷少、普遍具有明显的（111）面择优取向；而采用MAIP技术制备的薄膜表面存在较多大小不一的颗粒和孔洞，且无明显取向。在较低载荷下，采用FCAP薄膜表现出较好的抗磨性能，其磨斑表面存在沉积的TiN磨屑；而采用MAIP制备的薄膜磨斑表面无转移沉积磨屑，摩擦系数较高。

分别利用磁过滤阴极弧等离子体沉积装置和直流磁控溅射装置在不锈钢基底上制备了TiN涂层，采用X射线光电子能谱仪、X射线衍射仪和扫描电子显微镜对涂层的结构及形貌进行了表征；利用纳米压痕仪测定了涂层的硬度；在DF2PM型动摩擦系数精密测定仪上考察了涂层的摩擦学性能。结果表明：与采用直流磁控溅射法在400℃基底上制备的TiN涂层相比，采用磁过滤沉积装置在室温下制备的TiN涂层更加致密，表面平滑，最大硬度达35Gpa，摩擦系数明显较小（0.1～0.4），耐磨性较好。

The response of an RF sputtered NiOx thin film to step potential and its electrochromic mechanism have been investigated. It was found that the NiOx films manifested fine electrochromic properties. Bleaching and coloration did not cause the change of the film's structure. The NiOx films are non-stoichoimetric with Ni vacancies. It is suggested that the bleaching and coloration reaction of the NiOx films in a KOH solution occurs along the grain boundaries. The physical absorption of colored NiOx films is caused by the intraband absorbance of the t2g level of the Ni3+ ion.

Lanthanum-modified lead zirconate titanate (PLZT) thin films, with the La/Zr/Ti ratio being 9/63/37, were deposited on indium tin oxide (ITO)-coated glass substrate by R.F. magnetron sputtering method. Effects of heat-treatment conditions on the structure and chemical homogeneity of the PLZT thin films were investigated by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The PLZT thin films with desired perovskite structure were obtained after covered with lead oxide and then annealed at 625℃ for 150 min. The binding energy of Pb4f7/2, Ti2p3/2, Zr3d5/2, La3d5/2, and O1s in PLZT thin films were: 138.3, 455.7, 181.2, 835.9, and 529.4 eV, respectively. The excess lead oxide in the PLZT thin films promoted the perovskite structure formation, and baffled the movement of TiO2 and ZrO2 as well. A small quatity of TiO2 and ZrO2 coexisted with PLZT in the surface of samples. And the lack of oxygen inside the films resulted in the valence decrease of a little part of Ti's from +4 to +2.