中国科技论文在线

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2005年07月19日

闫鹏勋，吴志国，徐建伟，张玉娟，，张伟伟，刘伟民

无机材料学报，2004，19（6）：1386～1390，-0001，（）：

-1年11月30日

在室温条件下，利用磁过滤等离子体在单晶硅和不锈钢表面上制备了性能优异的纳米结构TiN薄膜。运用原子力显微镜和掠角入射X射线衍射仪对其结构与形貌进行了表征，利用纳米压痕仪测量了TiN薄膜的硬度和弹性模量。结果表明：TiN薄膜表面光滑，致密，无柱状晶；TiN晶粒的平均尺寸为50nm，薄膜硬度达50GPa，是传统CVD和PVD技术沉积氮化钛的两倍多；XRD衍射试验表明，纳米TiN的衍射角都普遍向小角度移动，TiN晶粒沿（111）择优生长。

TiN，磁过滤等离子体，纳米薄膜

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2005年07月19日

【期刊论文】Materials science communication High-temperature behavior of the boride layer of 45# carbon steel

闫鹏勋， P.X. Yan *， X.M. Zhang， J.W. Xu， Z.G. Wu， Q.M. Song

Materials Chemistry and Physics 71(2001)107–110，-0001，（）：

-1年11月30日

摘要

The high-temperature behavior of boronized layer of 45# carbon steel has been studied in detail by using high-temperature X-ray diffractometer (HTXRD), difference temperature analysis (DTA) technique, high-temperature microscope, high-temperature hardness tester. Research results show that (1) the hardness of the boride layer decrease with temperature, (2) there is no oxidation of boride layer on the measuring range of the temperature, and (3) the threshold temperature of the phase transformation of the boride layer from FeB to Fe2B is about 860℃.

Boronizing， High-temperature X-ray diffractometer， Difference temperature analysis， Hardness

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2005年07月19日

【期刊论文】Overgrowing single crystalline ZnB2O4 on multiwall carbon nanotubes: Straightening the curly tubes

闫鹏勋， P. X. Yan， a) J. Z. Liu， J. Wang， and Z. G. Wu

Appl. Phys. Lett., Vol. 85, No.20, 15 November 2004，-0001，（）：

-1年11月30日

摘要

Single crystals of ZnB2O4 have been grown from a supercooled molten ZnO-B2O3 system on multiwall carbon nanotubes. Transmission electron microscopy investigations indicated that the originally curly carbon nanotubes were well straightened after the single-crystal coating. The coating and straightening mechanism are discussed.

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2005年07月19日

【期刊论文】Post boronizing ion implantation of C45 steel

闫鹏勋， P.X. Yan a， *， Z.Q. Wei a， X.L. Wen a， Z.G. Wu a， J.W. Xu a， W.M. Liu b， J. Tian b

Applied Surface Science 195(2002)74-79，-0001，（）：

-1年11月30日

摘要

This article firstly presents results for C45 steel surface modification by post boronizing N

Boride， Gaseous boronizing， Ion implantation

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2005年07月19日

【期刊论文】SiCN thin film prepared at room temperature by r.f. reactive sputtering

闫鹏勋， X.C. Wu a， R.Q. Cai a， P.X. Yan a， *， W.M. Liu b， J. Tian b

Applied Surface Science 185(2002)262-266，-0001，（）：

-1年11月30日

摘要

Silicon-carbon nitride (SiCN) thin films were deposited on Si substrate at room temperature by r.f. reactive sputtering. Fourier transform infrared spectroscopy (FTIR), optical absorption spectra (α(λ)) and electrical conductivity (б) were studied for the thin films. The effect of the annealing on IR and a was investigated at different temperatures. IR analysis indicates that Si-H, C-N, Si-C, Si-N, C-N and C=N bonds are present in a-SiCN:H films. A shift of the stretching mode for Si-H bond to the high-wavenumber side is observed with increasing the nitrogen flow ratio уN2 (=Nz/(Ar+H2+N2+CH4)). The shift is from 2000 to 2190cm-1 when уN2=13.7%. The study shows that the film structure and optical and electrical properties are obviously modified readily by controlling the process parameters of deposition. The improvement in the film properties, e.g., good thermal stability, is explained mainly in terms of the cross-linked structure between the Si, C and N atoms.

SiCN thin film， Room temperature， r.， f.， reactive sputtering

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