中国科技论文在线

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2006年06月28日

【期刊论文】Hydrogen-defect shallow donors in Si

孟祥提， Xiang-Ti Meng， Ai-Guo Kang and Shou-Ren Bai

Jpn. J. Appl. Phys. Part 1. V40, No.4A (2001) 2123-6，-0001，（）：

-1年11月30日

The influence of different original Si crystals and neutron fluence on formation of the hydrogen-defect shallow donors in neutron-irradiated FZ Si: H2 has been studied. The annealing behavior of neutron-irradiated FZ Si: Ar, neutron-irradiated FZ Si: H2 k

silicon,， neutron radiation,， defects,， resistivity,， infrared absorption spectra

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2006年06月28日

【期刊论文】Vacancy-type defects in large-dose neutron-irradiated silicon containing hydrogen

孟祥提， By XIANG-TI MENG

PHILOSOPHICAL MAGAZINE B, 1994, VOL. 70, NO.4, 905-911，-0001，（）：

-1年11月30日

摘要

Vacancy-type defects created by neutron irradiation of floating-zone silicon containing hydrogen with a neutron dose of 1.2x1018cm-2 have been studied by positron lifetime spectroscopy and infrared absorption spectroscopy. The positron-trapping rates due

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2006年06月28日

【期刊论文】Effects of neutron irradiation on SiGe HBT and Si BJT devices

孟祥提， XIANG-TI MENG， HONG-WEI YANG， AI-GUO KANG， JI-LIN WANG， HONG-YONG JIA， PEI-YI CHEN， PEI-HSIN TSIEN

JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS 14-4 (2003) 199-203，-0001，（）：

-1年11月30日

摘要

The change of electrical performance of SiGe HBT and Si BJT is studied after irradiation with 1.3x10 13 and 1.0x10 14 reactor fast neutrons cm-2. Ic andβdecrease, while Ib increases generally with an increasing neutron irradiation fluence for SiGe HBT. Fo

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2006年06月28日

【期刊论文】New Si-H Infrared Absorption Peak Corresponding to the Hydrogen-Defect Shallow Donors in Silicon

孟祥提， Xiang-Ti Meng， Ji-Wu Xiong， Guo-Gang Qin and Yong-Chang Du

Physica Scripta. Vol. 52, 108-112, 1995，-0001，（）：

-1年11月30日

摘要

A new Si-H infrared absorption peak at 2016cm-1 is found to be related to the hydrogen-defect shallow donors apart from the 2162cm-1 peak, indicating that the shallow donors do not correspond to only one kind of defect structure. The micro-structure of th

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2006年06月28日

【期刊论文】Degradation of Black and White Complementary Metal Oxide Semiconductor (CMOS) Digital Image Sensor by Gamma-Irradiation

孟祥提， Xiang-Ti MENG*， Ai-Guo KANG and Zheng YOU

Jpn. L Appl. Phys. VoL. 41 (2002) pL2 No.8Ba，-0001，（）：

-1年11月30日

摘要

For the black and white complementary metal oxide semiconductor (B & W CMOS) digital image sensors irradiated at the y-my dose up to 60krad, the captured pictures are very clear, the average brightness, nonuniformity and dark noise of the dark output imag

CMOS image sensor,， gamma radiation,， silicon,， electron-hole pairs,， average brightness,， nonuniformity,， dark noise

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