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【期刊论文】Defect annealing of neutron-irradiated silicon crystals
孟祥提, MENG XIANG-TI, ZUO KAI-FEN
JOURNAL OF MATERIALS SCIENCE 30 (1995) 4195-4198,-0001,():
-1年11月30日
Doppler broadening positron annihilation spectroscopy has been used to investigate the effects of neutron integrated flux and hydrogen on annealing behaviour of defects in silicon crystals. The concentration of neutron radiation defects was estimated, act
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孟祥提, Xiang-Ti Meng*
Nuclear Instruments and Methods in Physics Research B 95 (1995) 65-69,-0001,():
-1年11月30日
The positron lifetime spectroscopy indicates that the V- and V2-type defects coexist in hydrogen containing FZ Si irradiated with high-dose reactor neutrons. Their positron annihilation behavior has been ascribed to the formation and annealing out of some
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【期刊论文】Effects of neutron irradiation on SiGe HBT and Si BJT devices
孟祥提, XIANG-TI MENG, HONG-WEI YANG, AI-GUO KANG, JI-LIN WANG, HONG-YONG JIA, PEI-YI CHEN, PEI-HSIN TSIEN
JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS 14-4 (2003) 199-203,-0001,():
-1年11月30日
The change of electrical performance of SiGe HBT and Si BJT is studied after irradiation with 1.3x10 13 and 1.0x10 14 reactor fast neutrons cm-2. Ic andβdecrease, while Ib increases generally with an increasing neutron irradiation fluence for SiGe HBT. Fo
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【期刊论文】Effects of hydrogen on the annealing behavior of neutron-radiation-induced defects in Si
孟祥提, Xiang-Ti Meng, A. Zecca and R.S. Brusa, W. Puff
PHYSICAL REVIEW B VOLUME 50, NUMBER 4 15 JULY 1994-Ⅱ,-0001,():
-1年11月30日
Positron-lifetime measurements indicate that the effect of hydrogen on the annealing behavior of de- fects in Si irradiated with 3×10 17 neutrons/cm2 is very obvious. Neutron-induced monovacancy-type defects in hydrogen-containing Si disappear at 400℃, 20
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【期刊论文】Positron-trap centers in neutron-irradiated silicon containing hydrogen
孟祥提, X.T. Meng, A. Zecca, R.S. Brusa
Appl. Phys. A 60, 81-85 (1995),-0001,():
-1年11月30日
The defect evolution as a function of the an-nealing temperature has been studied in monocrystalline silicon grown in a hydrogen atmosphere and irradiated with 3.6x1017 neutrons/cm2. Positron lifetime spectros-copy has been used and the results compared w
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