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2006年06月28日

【期刊论文】Defect annealing of neutron-irradiated silicon crystals

孟祥提， MENG XIANG-TI， ZUO KAI-FEN

JOURNAL OF MATERIALS SCIENCE 30 (1995) 4195-4198，-0001，（）：

-1年11月30日

Doppler broadening positron annihilation spectroscopy has been used to investigate the effects of neutron integrated flux and hydrogen on annealing behaviour of defects in silicon crystals. The concentration of neutron radiation defects was estimated, act

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2006年06月28日

【期刊论文】Positron annihilation investigation of defects in hydrogen containing FZ Si irradiated with high-dose reactor neutrons

孟祥提， Xiang-Ti Meng*

Nuclear Instruments and Methods in Physics Research B 95 (1995) 65-69，-0001，（）：

-1年11月30日

摘要

The positron lifetime spectroscopy indicates that the V- and V2-type defects coexist in hydrogen containing FZ Si irradiated with high-dose reactor neutrons. Their positron annihilation behavior has been ascribed to the formation and annealing out of some

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2006年06月28日

【期刊论文】Effects of neutron irradiation on SiGe HBT and Si BJT devices

孟祥提， XIANG-TI MENG， HONG-WEI YANG， AI-GUO KANG， JI-LIN WANG， HONG-YONG JIA， PEI-YI CHEN， PEI-HSIN TSIEN

JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS 14-4 (2003) 199-203，-0001，（）：

-1年11月30日

摘要

The change of electrical performance of SiGe HBT and Si BJT is studied after irradiation with 1.3x10 13 and 1.0x10 14 reactor fast neutrons cm-2. Ic andβdecrease, while Ib increases generally with an increasing neutron irradiation fluence for SiGe HBT. Fo

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2006年06月28日

【期刊论文】Effects of hydrogen on the annealing behavior of neutron-radiation-induced defects in Si

孟祥提， Xiang-Ti Meng， A. Zecca and R.S. Brusa， W. Puff

PHYSICAL REVIEW B VOLUME 50, NUMBER 4 15 JULY 1994-Ⅱ，-0001，（）：

-1年11月30日

摘要

Positron-lifetime measurements indicate that the effect of hydrogen on the annealing behavior of de- fects in Si irradiated with 3×10 17 neutrons/cm2 is very obvious. Neutron-induced monovacancy-type defects in hydrogen-containing Si disappear at 400℃, 20

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2006年06月28日

【期刊论文】Positron-trap centers in neutron-irradiated silicon containing hydrogen

孟祥提， X.T. Meng， A. Zecca， R.S. Brusa

Appl. Phys. A 60, 81-85 (1995)，-0001，（）：

-1年11月30日

摘要

The defect evolution as a function of the an-nealing temperature has been studied in monocrystalline silicon grown in a hydrogen atmosphere and irradiated with 3.6x1017 neutrons/cm2. Positron lifetime spectros-copy has been used and the results compared w

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