Vacancy-type defects created by neutron irradiation of floating-zone silicon containing hydrogen with a neutron dose of 1.2x1018cm-2 have been studied by positron lifetime spectroscopy and infrared absorption spectroscopy. The positron-trapping rates due

The defect evolution as a function of the an-nealing temperature has been studied in monocrystalline silicon grown in a hydrogen atmosphere and irradiated with 3.6x1017 neutrons/cm2. Positron lifetime spectros-copy has been used and the results compared w

The positron lifetime spectroscopy indicates that the V- and V2-type defects coexist in hydrogen containing FZ Si irradiated with high-dose reactor neutrons. Their positron annihilation behavior has been ascribed to the formation and annealing out of some

A new Si-H infrared absorption peak at 2016cm-1 is found to be related to the hydrogen-defect shallow donors apart from the 2162cm-1 peak, indicating that the shallow donors do not correspond to only one kind of defect structure. The micro-structure of th

The V and V2-type defects are dominant in NTD Si irradiated with 6x1016, 3.6xl027 and 1.2x1018 neutrons/cm2. Two distinct annealing stages of V-type defects exist: one at about 200℃ due to the annealing-out of P-V and (V2-O)- complexes; the other at about