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【期刊论文】Hydrogen-defect shallow donors in Si
孟祥提, Xiang-Ti Meng, Ai-Guo Kang and Shou-Ren Bai
Jpn. J. Appl. Phys. Part 1. V40, No.4A (2001) 2123-6,-0001,():
-1年11月30日
The influence of different original Si crystals and neutron fluence on formation of the hydrogen-defect shallow donors in neutron-irradiated FZ Si: H2 has been studied. The annealing behavior of neutron-irradiated FZ Si: Ar, neutron-irradiated FZ Si: H2 k
silicon,, neutron radiation,, defects,, resistivity,, infrared absorption spectra
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【期刊论文】Vacancy-type defects in large-dose neutron-irradiated silicon containing hydrogen
孟祥提, By XIANG-TI MENG
PHILOSOPHICAL MAGAZINE B, 1994, VOL. 70, NO.4, 905-911,-0001,():
-1年11月30日
Vacancy-type defects created by neutron irradiation of floating-zone silicon containing hydrogen with a neutron dose of 1.2x1018cm-2 have been studied by positron lifetime spectroscopy and infrared absorption spectroscopy. The positron-trapping rates due
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【期刊论文】Effects of neutron irradiation on SiGe HBT and Si BJT devices
孟祥提, XIANG-TI MENG, HONG-WEI YANG, AI-GUO KANG, JI-LIN WANG, HONG-YONG JIA, PEI-YI CHEN, PEI-HSIN TSIEN
JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS 14-4 (2003) 199-203,-0001,():
-1年11月30日
The change of electrical performance of SiGe HBT and Si BJT is studied after irradiation with 1.3x10 13 and 1.0x10 14 reactor fast neutrons cm-2. Ic andβdecrease, while Ib increases generally with an increasing neutron irradiation fluence for SiGe HBT. Fo
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孟祥提, Xiang-Ti MENG*, Ai-Guo KANG and Zheng YOU
Jpn. L Appl. Phys. VoL. 41 (2002) pL2 No.8Ba,-0001,():
-1年11月30日
For the black and white complementary metal oxide semiconductor (B & W CMOS) digital image sensors irradiated at the y-my dose up to 60krad, the captured pictures are very clear, the average brightness, nonuniformity and dark noise of the dark output imag
CMOS image sensor,, gamma radiation,, silicon,, electron-hole pairs,, average brightness,, nonuniformity,, dark noise
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孟祥提, Xiang-Ti Meng, Ji-Wu Xiong, Guo-Gang Qin and Yong-Chang Du
Physica Scripta. Vol. 52, 108-112, 1995,-0001,():
-1年11月30日
A new Si-H infrared absorption peak at 2016cm-1 is found to be related to the hydrogen-defect shallow donors apart from the 2162cm-1 peak, indicating that the shallow donors do not correspond to only one kind of defect structure. The micro-structure of th
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