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2006年06月28日

【期刊论文】Degradation of Black and White Complementary Metal Oxide Semiconductor (CMOS) Digital Image Sensor by Gamma-Irradiation

孟祥提， Xiang-Ti MENG*， Ai-Guo KANG and Zheng YOU

Jpn. L Appl. Phys. VoL. 41 (2002) pL2 No.8Ba，-0001，（）：

-1年11月30日

摘要

For the black and white complementary metal oxide semiconductor (B & W CMOS) digital image sensors irradiated at the y-my dose up to 60krad, the captured pictures are very clear, the average brightness, nonuniformity and dark noise of the dark output imag

CMOS image sensor,， gamma radiation,， silicon,， electron-hole pairs,， average brightness,， nonuniformity,， dark noise

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2006年06月28日

【期刊论文】Vacancy-type defects in large-dose neutron-irradiated silicon containing hydrogen

孟祥提， By XIANG-TI MENG

PHILOSOPHICAL MAGAZINE B, 1994, VOL. 70, NO.4, 905-911，-0001，（）：

-1年11月30日

摘要

Vacancy-type defects created by neutron irradiation of floating-zone silicon containing hydrogen with a neutron dose of 1.2x1018cm-2 have been studied by positron lifetime spectroscopy and infrared absorption spectroscopy. The positron-trapping rates due

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2006年06月28日

【期刊论文】Electron irradiation effects on DC electrical performances of SiGe HBT in a comparison with Si BJT

孟祥提， MENG Xianneti)， ZHANG Ximin)， WANG Jilin)， HUANG Wentiao)， CHEN Peiyi)， JIA Hongyong)， and TSIEN Peihsin)

RARE METALS VoL 23, NO.4, Dec 2004, p.330，-0001，（）：

-1年11月30日

摘要

The DC characteristics of SiGe HBT irradiated at different electron dose have been studied in a comparison with those of Si BJT Generally, Ib and Ib-Ib increase. IeIe-Ico and its+/-transtition Vbe as well as DC curecent gain B decreases with increasing do

semiconductor technology， SiGe HBT， electron irradiation， Si BJT， DC electrical performance

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2006年06月28日

【期刊论文】Gamma-ray radiation and annealing effects of color CMOS image sensors*

孟祥提， Xiang-Ti Meng， Ai-Guo Kang， Xing-Yu Wang and Zheng You

Semicond. Sci. Technol. Vol. 18, No.1 (2003) 1，-0001，（）：

-1年11月30日

摘要

For the color CMOS digital image sensors irradiated with differentγ-ray doses, the average brightness and non-uniformity of the dark output images increase obviously above 0.6kGy. Some lightful regions appear on the images, their brightness and area becom

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2006年06月28日

【期刊论文】Effects of hydrogen on the annealing behavior of neutron-radiation-induced defects in Si

孟祥提， Xiang-Ti Meng， A. Zecca and R.S. Brusa， W. Puff

PHYSICAL REVIEW B VOLUME 50, NUMBER 4 15 JULY 1994-Ⅱ，-0001，（）：

-1年11月30日

摘要

Positron-lifetime measurements indicate that the effect of hydrogen on the annealing behavior of de- fects in Si irradiated with 3×10 17 neutrons/cm2 is very obvious. Neutron-induced monovacancy-type defects in hydrogen-containing Si disappear at 400℃, 20

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