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孟祥提, Xiang-Ti Meng, Ji-Wu Xiong, Guo-Gang Qin and Yong-Chang Du
Physica Scripta. Vol. 52, 108-112, 1995,-0001,():
-1年11月30日
A new Si-H infrared absorption peak at 2016cm-1 is found to be related to the hydrogen-defect shallow donors apart from the 2162cm-1 peak, indicating that the shallow donors do not correspond to only one kind of defect structure. The micro-structure of th
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【期刊论文】Vacancy-type defects in large-dose neutron-irradiated silicon containing hydrogen
孟祥提, By XIANG-TI MENG
PHILOSOPHICAL MAGAZINE B, 1994, VOL. 70, NO.4, 905-911,-0001,():
-1年11月30日
Vacancy-type defects created by neutron irradiation of floating-zone silicon containing hydrogen with a neutron dose of 1.2x1018cm-2 have been studied by positron lifetime spectroscopy and infrared absorption spectroscopy. The positron-trapping rates due
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【期刊论文】Gamma-ray radiation and annealing effects of color CMOS image sensors*
孟祥提, Xiang-Ti Meng, Ai-Guo Kang, Xing-Yu Wang and Zheng You
Semicond. Sci. Technol. Vol. 18, No.1 (2003) 1,-0001,():
-1年11月30日
For the color CMOS digital image sensors irradiated with differentγ-ray doses, the average brightness and non-uniformity of the dark output images increase obviously above 0.6kGy. Some lightful regions appear on the images, their brightness and area becom
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孟祥提, MENG Xiangti), WANG Ruipian), KANG Aiguo), WANG Jilin), JIA Hongyong), CHEN Peiyi), and Peihsin Tsien)
RARE METALS Vol. 22, No.1, Mar 2003, p. 69,-0001,():
-1年11月30日
The change of electrical performances of silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied as a function of reactor fast neutron radiation fluence. After neutron irradiation, the collecto
semiconductor technology, SiGe HBT, neutron irradiation, Si BJT, electrical performance
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【期刊论文】Hydrogen-defect shallow donors in Si
孟祥提, Xiang-Ti Meng, Ai-Guo Kang and Shou-Ren Bai
Jpn. J. Appl. Phys. Part 1. V40, No.4A (2001) 2123-6,-0001,():
-1年11月30日
The influence of different original Si crystals and neutron fluence on formation of the hydrogen-defect shallow donors in neutron-irradiated FZ Si: H2 has been studied. The annealing behavior of neutron-irradiated FZ Si: Ar, neutron-irradiated FZ Si: H2 k
silicon,, neutron radiation,, defects,, resistivity,, infrared absorption spectra
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