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孟祥提, MENG Xiangti), KANG Aiguo), ZHANG Ximin), Li Jihong), HUANG Qiang), LI Fengmei), LIU Xiaoguang), and ZHOU Hongyu)
RARE METALS. Vol 23, No.2 (2004) 165-170,-0001,():
-1年11月30日
Changes of the average brightness and non-uniformity of dark output images, and quality of pictures captured under natural lighting for the color CMOS digital image sensors irradiated at different electron doses have been studied in comparison to those fr
color CMOS image sensor, electron irradiation, gamma radiation, irradiation damage, output characteristic, Si
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【期刊论文】Effects of electron and gamma-ray irradiation on CMOS analog image sensors
孟祥提, Xiang-Ti Meng a, *, Ai-Guo Kang a, Ji-Hong Li a, Hai-Yun Zhang b, Shi-jie Yu b, Zheng You b
X.-T. Meng et al./Microelectronics Reliability xxx (2003) xxx-xxx,-0001,():
-1年11月30日
Changes in the average brightness and non-uniformity of dark output images, and quality of the pictures captured under natural lighting from the black and white (B & W) complementary metal oxide semiconductor (CMOS) analog image sensors irradiated at dier
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孟祥提, MENG Xianneti), ZHANG Ximin), WANG Jilin), HUANG Wentiao), CHEN Peiyi), JIA Hongyong), and TSIEN Peihsin)
RARE METALS VoL 23, NO.4, Dec 2004, p.330,-0001,():
-1年11月30日
The DC characteristics of SiGe HBT irradiated at different electron dose have been studied in a comparison with those of Si BJT Generally, Ib and Ib-Ib increase. IeIe-Ico and its+/-transtition Vbe as well as DC curecent gain B decreases with increasing do
semiconductor technology, SiGe HBT, electron irradiation, Si BJT, DC electrical performance
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孟祥提, Xiang-Ti MENG*, Ai-Guo KANG and Zheng YOU
Jpn. L Appl. Phys. VoL. 41 (2002) pL2 No.8Ba,-0001,():
-1年11月30日
For the black and white complementary metal oxide semiconductor (B & W CMOS) digital image sensors irradiated at the y-my dose up to 60krad, the captured pictures are very clear, the average brightness, nonuniformity and dark noise of the dark output imag
CMOS image sensor,, gamma radiation,, silicon,, electron-hole pairs,, average brightness,, nonuniformity,, dark noise
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【期刊论文】Identification of Defects in Neutron-transmutation-doped Si by Positrons*
孟祥提, MENG Xiang-Ti
SCIENCE IN CHINA (Series A) Vol. 37 No.10 (1994) 1263-1271,-0001,():
-1年11月30日
The V and V2-type defects are dominant in NTD Si irradiated with 6x1016, 3.6xl027 and 1.2x1018 neutrons/cm2. Two distinct annealing stages of V-type defects exist: one at about 200℃ due to the annealing-out of P-V and (V2-O)- complexes; the other at about
positron lifetime spectroscopy,, neutron radiation,, silicon
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