中国科技论文在线

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2006年06月28日

【期刊论文】Identification of Defects in Neutron-transmutation-doped Si by Positrons*

孟祥提， MENG Xiang-Ti

SCIENCE IN CHINA (Series A) Vol. 37 No.10 (1994) 1263-1271，-0001，（）：

-1年11月30日

The V and V2-type defects are dominant in NTD Si irradiated with 6x1016, 3.6xl027 and 1.2x1018 neutrons/cm2. Two distinct annealing stages of V-type defects exist: one at about 200℃ due to the annealing-out of P-V and (V2-O)- complexes; the other at about

positron lifetime spectroscopy,， neutron radiation,， silicon

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2006年06月28日

【期刊论文】Positron annihilation investigation of defects in hydrogen containing FZ Si irradiated with high-dose reactor neutrons

孟祥提， Xiang-Ti Meng*

Nuclear Instruments and Methods in Physics Research B 95 (1995) 65-69，-0001，（）：

-1年11月30日

摘要

The positron lifetime spectroscopy indicates that the V- and V2-type defects coexist in hydrogen containing FZ Si irradiated with high-dose reactor neutrons. Their positron annihilation behavior has been ascribed to the formation and annealing out of some

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2006年06月28日

【期刊论文】Effects of electron and gamma-ray irradiation on CMOS analog image sensors

孟祥提， Xiang-Ti Meng a， *， Ai-Guo Kang a， Ji-Hong Li a， Hai-Yun Zhang b， Shi-jie Yu b， Zheng You b

X.-T. Meng et al./Microelectronics Reliability xxx (2003) xxx-xxx，-0001，（）：

-1年11月30日

摘要

Changes in the average brightness and non-uniformity of dark output images, and quality of the pictures captured under natural lighting from the black and white (B & W) complementary metal oxide semiconductor (CMOS) analog image sensors irradiated at dier

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2006年06月28日

【期刊论文】Positron-trap centers in neutron-irradiated silicon containing hydrogen

孟祥提， X.T. Meng， A. Zecca， R.S. Brusa

Appl. Phys. A 60, 81-85 (1995)，-0001，（）：

-1年11月30日

摘要

The defect evolution as a function of the an-nealing temperature has been studied in monocrystalline silicon grown in a hydrogen atmosphere and irradiated with 3.6x1017 neutrons/cm2. Positron lifetime spectros-copy has been used and the results compared w

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2006年06月28日

【期刊论文】Gamma-ray radiation and annealing effects of color CMOS image sensors*

孟祥提， Xiang-Ti Meng， Ai-Guo Kang， Xing-Yu Wang and Zheng You

Semicond. Sci. Technol. Vol. 18, No.1 (2003) 1，-0001，（）：

-1年11月30日

摘要

For the color CMOS digital image sensors irradiated with differentγ-ray doses, the average brightness and non-uniformity of the dark output images increase obviously above 0.6kGy. Some lightful regions appear on the images, their brightness and area becom

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