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2006年06月28日

【期刊论文】Comparison of neutron irradiation effects on the electrical performances of SiGe HBT and Si BJT

孟祥提, MENG Xiangti), WANG Ruipian), KANG Aiguo), WANG Jilin), JIA Hongyong), CHEN Peiyi), and Peihsin Tsien)

RARE METALS Vol. 22, No.1, Mar 2003, p. 69,-0001,():

-1年11月30日

摘要

The change of electrical performances of silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied as a function of reactor fast neutron radiation fluence. After neutron irradiation, the collecto

semiconductor technology, SiGe HBT, neutron irradiation, Si BJT, electrical performance

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2006年06月28日

【期刊论文】Defect annealing of neutron-irradiated silicon crystals

孟祥提, MENG XIANG-TI, ZUO KAI-FEN

JOURNAL OF MATERIALS SCIENCE 30 (1995) 4195-4198,-0001,():

-1年11月30日

摘要

Doppler broadening positron annihilation spectroscopy has been used to investigate the effects of neutron integrated flux and hydrogen on annealing behaviour of defects in silicon crystals. The concentration of neutron radiation defects was estimated, act

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2006年06月28日

【期刊论文】Effects of hydrogen on the annealing behavior of neutron-radiation-induced defects in Si

孟祥提, Xiang-Ti Meng, A. Zecca and R.S. Brusa, W. Puff

PHYSICAL REVIEW B VOLUME 50, NUMBER 4 15 JULY 1994-Ⅱ,-0001,():

-1年11月30日

摘要

Positron-lifetime measurements indicate that the effect of hydrogen on the annealing behavior of de- fects in Si irradiated with 3×10 17 neutrons/cm2 is very obvious. Neutron-induced monovacancy-type defects in hydrogen-containing Si disappear at 400℃, 20

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2006年06月28日

【期刊论文】Electron irradiation effects on DC electrical performances of SiGe HBT in a comparison with Si BJT

孟祥提, MENG Xianneti), ZHANG Ximin), WANG Jilin), HUANG Wentiao), CHEN Peiyi), JIA Hongyong), and TSIEN Peihsin)

RARE METALS VoL 23, NO.4, Dec 2004, p.330,-0001,():

-1年11月30日

摘要

The DC characteristics of SiGe HBT irradiated at different electron dose have been studied in a comparison with those of Si BJT Generally, Ib and Ib-Ib increase. IeIe-Ico and its+/-transtition Vbe as well as DC curecent gain B decreases with increasing do

semiconductor technology, SiGe HBT, electron irradiation, Si BJT, DC electrical performance

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2006年06月28日

【期刊论文】Difference in electron- and gamma-irradiation effects on output characteristic of color CMOS digital image sensors

孟祥提, MENG Xiangti), KANG Aiguo), ZHANG Ximin), Li Jihong), HUANG Qiang), LI Fengmei), LIU Xiaoguang), and ZHOU Hongyu)

RARE METALS. Vol 23, No.2 (2004) 165-170,-0001,():

-1年11月30日

摘要

Changes of the average brightness and non-uniformity of dark output images, and quality of pictures captured under natural lighting for the color CMOS digital image sensors irradiated at different electron doses have been studied in comparison to those fr

color CMOS image sensor, electron irradiation, gamma radiation, irradiation damage, output characteristic, Si

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  • 孟祥提 邀请

    清华大学,北京

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